Noise Temperature and the Spectral Density of Hot Carrier Velocity Flutuations in Semiconductors-Reference-Cited by-同舟云学术

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Noise Temperature and the Spectral Density of Hot Carrier Velocity Flutuations in Semiconductors

Published:1973-01-01 Issue:1 Volume:55 Page:K43-K46
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Nougier J. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction Problems

2. Noise Temperature of Hot Electrons in Germanium

3. and , Proc. Internat. Conf. Phys. Semicond., Exeter 1962 (p. 128).

4. Noise Theory for Hot Electrons

5. in: Fluctuation Phenomena in Solids, Ed. , Academic Press, New York/London 1965 (chap. 8).

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise and Diffusion in Submicron Structures;The Physics of Submicron Semiconductor Devices;1988

2. General theory;Topics in Applied Physics;1985

3. Hot electron noise in n-InSb;International Journal of Electronics;1980-05

4. Noise and Diffusion of Hot Carriers;Physics of Nonlinear Transport in Semiconductors;1980

5. Anisotropy of the differential conductivity and of the transverse diffusion coefficient inn‐type silicon;Applied Physics Letters;1978-07

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