Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor-Reference-Cited by-同舟云学术

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Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor

Published:1991-10-01 Issue:2 Volume:167 Page:K97-K100
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Rabinal M. K.,Asokan S.,Godazaev M. O.,Mamedov N. T.,Gopal E. S. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. On surface superconductivity

2. (Ed.), Physics and Chemistry of Materials with Layered Structure, Vol. 1, Reidel, Dordrecht 1977.

3. Memory-switching effect in single crystals of thallium selenide

4. X-ray studies of thallium chalcogenides TIS and TISe up to 37 GPa

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and elastic properties of TlInSe2 at high pressure;Solid State Sciences;2021-01

2. Neutron diffraction study of the crystal structure of TlInSe2 at high pressure;International Journal of Modern Physics B;2019-06-20

3. Pressure induced band inversion, electronic and structural phase transitions in InTe: A combined experimental and theoretical study;Physical Review B;2018-04-27

4. Observation of Two Peculiar Types of Electronic Dispersive Structures in Thallium Selenide Studied by Angle-Resolved Photoemission Spectroscopy;Journal of the Physical Society of Japan;2014-05-15

5. The mechanism of a current passing in TlInSe2 monocrystals in strong fields;Surface Engineering and Applied Electrochemistry;2010-10

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