Role of Electron—Phonon Interaction and Peripheral Phonons in the Lattice Thermal Conductivity of Doped Semiconductor at Low Temperatures. Application to Phosphorus-Doped Germanium-Reference-Cited by-同舟云学术

Role of Electron—Phonon Interaction and Peripheral Phonons in the Lattice Thermal Conductivity of Doped Semiconductor at Low Temperatures. Application to Phosphorus-Doped Germanium

Published:1978-08-01 Issue:2 Volume:88 Page:417-427
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Boghosian H. H.,Dubey K. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Thermal Transport Properties ofn-Type Ge at Low Temperatures

2. Thermal and Electrical Properties of Heavily Doped Ge‐Si Alloys up to 1300°K

3. Lattice Thermal Conductivity ofp-Type GaSb in the Temperature Range 2-20 °K

4. Phonon Scattering in Semiconductors From Thermal Conductivity Studies

5. Comments on the Scattering of Phonons by Bound Donor Electrons inn−Ge

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2. Low-temperature thermal conductivity of heavily dopedn-type Ge;Physical Review B;1985-06-15

3. Role of Boundary Scattering in the Phonon Drag Thermoelectric Power and Lattice Thermal Conductivity of a Doped Semiconductor at Low Temperatures: Application to Phosphorus Doped Ge;physica status solidi (b);1982-05-01

4. Analysis of the lattice thermal resistivity due to the presence of electrons at low temperatures: Application to phosphorus-doped Ge;Journal of Thermal Analysis;1981-10

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