Phase Transition in Narrow-Band Compensated Ferroelectric Semiconductors-Reference-Cited by-同舟云学术

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Phase Transition in Narrow-Band Compensated Ferroelectric Semiconductors

Published:1982-10-01 Issue:2 Volume:113 Page:K123-K126
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Buinov N. S.,Mikhnevich V. V.,Syrtsov S. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Impurities and ferroelectric properties of semiconductors

2. Carrier-Concentration Dependence of the Phase Transition in SnTe

3. Ser. fiz. i t;Gulbis,1978

4. , and , Dokl. Akad. Nauk SSSR (1982), to be published.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibronic Theory of Structural Phase Transitions and Displacive Ferroelectrics;physica status solidi (b);1988-09-01

2. The Influence of Impurities on the Phase Transition in Ferroelectrics of Restricted Dimensions;physica status solidi (b);1985-11-01

3. Structure and Bonding in Cubic IV-VI Crystals VII. On the Influence of Defects on the Stability of the Cubic Structure;physica status solidi (b);1985-08-01

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