Contribution of Electron-Two-Phonon Scattering to Free Carrier Absorption in n-GaSb-Reference-Cited by-同舟云学术

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Contribution of Electron-Two-Phonon Scattering to Free Carrier Absorption in n-GaSb

Published:1985-04-01 Issue:2 Volume:128 Page:K117-K122
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Kubakaddi S. S.,Mulimani B. G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Electron Transport in Compound Semiconductors, Springer-Verlag, New York 1980.

2. Free-Carrier Infrared Absorption and Determination of Deformation-Potential Constant in n-type InSb

3. Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSb

4. Energy Band Structure of Gallium Antimonide

5. Electron Mobility in Direct-Gap Polar Semiconductors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot electrons in low-dimensional structures;Reports on Progress in Physics;1991-02-01

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