The Dependence of Magnetic Ordering Temperature in Amorphous Semiconductors on Paramagnetic Centre Concentration
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Germanium implantation into amorphous silicon films;Ion Beam Modification of Materials;1996
4. Germanium implantation into amorphous silicon films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
5. Anomalous electron-spin relaxation in amorphous silicon;Physical Review B;1986-04-01
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