Bulk Amorphous GaSb Semiconductors Prepared by Thermobaric Treatment: Formation and Properties-Reference-Cited by-同舟云学术

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Bulk Amorphous GaSb Semiconductors Prepared by Thermobaric Treatment: Formation and Properties

Published:1996-11-01 Issue:1 Volume:198 Page:491-496
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Barkalov O. I.,Kolesnikov A. I.,Antonov V. E.,Ponyatovsky E. G.,Dahlborg U.,Dahlborg M.,Hannon A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Pressure—induced amorphous phases

2. , , and , J. non-crys-tall. Solids, in press.

3. Solid state amorphization of the GaSb high pressure phase

4. , , , and , unpublished.

5. The structure of tetrahedrally coordinated amorphous semiconductors

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1. Amorphous Group III–V Semiconductors;Springer Series in Optical Sciences;2014-11-06

2. Solid-state amorphization of a quenched high-pressure GaSb phase studied by real-time neutron diffraction: evolution of the crystalline phase;Journal of Physics: Condensed Matter;2008-12-19

3. Pressure dependence of the structure of liquid InAs up to 13 GPa;Journal of Physics: Condensed Matter;2004-03-26

4. A thermodynamic approach toT–Pphase diagrams of substances in liquid and amorphous states;Journal of Physics: Condensed Matter;2003-08-29

5. Neutron diffraction and reverse Monte Carlo study of bulk amorphousGa38Sb38Ge24alloys;Physical Review B;2000-10-01

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