Electroreflectance spectrum of inas in the range of E0 and E0 + δ0 transitions
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Band-population interference phenomena in the electroreflectance of narrow-gap semiconductors under heavy surface accumulation
2. Theory of band-population effects in electroreflectance
3. Electroreflectance study of interband magneto-optical transitions in InAs and InSb at 1.5° K
4. Electroreflectance Studies of InAs, GaAs, and (Ga,In) As Alloys
5. Electroreflectance studies of Γ15 → Γ1 transitions in InAs1−xPx alloys
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2. Facile synthesis of colloidal InAs nanocrystals using triphenylarsine as an arsenic source;Journal of Crystal Growth;2014-11
3. Parametric model dielectric functions of InAs for temperatures from 22 to 675 K;Journal of the Korean Physical Society;2012-12
4. Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy;AIP Advances;2012-12
5. Optical properties of InxAl1−xAs alloy films;Applied Physics Letters;2008-04-14
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