Observation of a Strong Dose Dependence in57Co Implantations in Si and Ge-Reference-Cited by-同舟云学术

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Observation of a Strong Dose Dependence in57Co Implantations in Si and Ge

Published:1979-06-01 Issue:2 Volume:93 Page:K107-K110
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Langouche G.,Dézsi I.,van Rossum M.,de Bruyn J.,Coussement R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Ph. D. Thesis, Stanford University, 1971.

2. On the Existence of a Quadrupole Interaction at57Fe Implanted in Si and Ge

3. Evidence of the electric quadrupole coupling of 57Fe implanted in silicon

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Implantation of Coulomb excited57Fe;Hyperfine Interactions;1990-07

2. Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

3. Characterization of Semiconductors by Mössbauer Spectroscopy;Mössbauer Spectroscopy Applied to Inorganic Chemistry;1989

4. Mössbauer investigations of151Eu implanted in Si;Hyperfine Interactions;1988-02

5. Positron lifetime and Doppler studies of Co-Si alloys;Journal of Physics F: Metal Physics;1986-11

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