Metal-Insulator Transition in n-InSb under High Hydrostatic Pressure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Galvanomagnetic Properties of n-Type InSb at Low Temperatures II. Magnetic Field-Induced Metal-Nonmetal Transition
2. Magnetoresistance and Hall effect in n-type indium antimonide in the magnetic freeze-out region
3. Proc. Internat. Summer School Narrow Gap Semicond., Nimes (France) 1979.
4. Pressure-induced Mott transition in doped semiconductors
5. Proc. Internat. Conf. Physics of Narrow Gap Semiconductors, Linz 1981 (p. 420).
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain‐induced current leakage in InSb photovoltaic detectors;Journal of Applied Physics;1987-12-15
2. Metal-insulator transition and metastable state in high-purity n-InSb under high hydrostatic pressure;physica status solidi (b);1986-04-01
3. Sensitive Pressure Gauge on the Basis of Pure n-InSb;Physica Status Solidi (a);1984-10-16
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