Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications-Reference-Cited by-同舟云学术

Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

Published:2018-11-13 Issue:24 Volume:13 Page:3912-3919
ISSN:1861-4728
Container-title:Chemistry - An Asian Journal
language:en
Short-container-title:Chem. Asian J.

Author:

Sanctis Shawn¹^ORCID,Hoffmann Rudolf C.¹,Koslowski Nico¹,Foro Sabine²,Bruns Michael³,Schneider Jörg J.¹^ORCID

Affiliation:

1. Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie; Technische Universität Darmstadt; Alarich-Weiss-Straße 12 64287 Darmstadt Germany

2. Department of Material Science; Technische Universität Darmstadt; Alarich-Weiss-Straße 8 64287 Darmstadt Germany

3. Institute for Applied Materials-Karlsruhe Nano Micro Facility; Karlsruhe Institute of Technology (KIT); Hermann-von-Helmholtz-Platz 1 D-76344 Eggenstein-Leopoldshafen Germany

Publisher

Wiley

Subject

General Chemistry,Biochemistry,Organic Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/asia.201801371/fullpdf

Reference66 articles.

1. Material characteristics and applications of transparent amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. An amorphous oxide semiconductor thin-film transistor route to oxide electronics

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