Superlight and Superflexible Three-Dimensional Semiconductor Frameworks A(X≡Y)4(A=Si, Ge; X/Y=C, B, N) with Tunable Optoelectronic and Mechanical Properties from First-Principles-Reference-Cited by-同舟云学术

Superlight and Superflexible Three-Dimensional Semiconductor Frameworks A(X≡Y)4(A=Si, Ge; X/Y=C, B, N) with Tunable Optoelectronic and Mechanical Properties from First-Principles

Published:2017-03-07 Issue:7 Volume:12 Page:804-810
ISSN:1861-4728
Container-title:Chemistry - An Asian Journal
language:en
Short-container-title:Chem. Asian J.

Author:

Cao Xinrui¹^ORCID,Li Xiao-Fei²,Zhu Zi-Zhong¹

Affiliation:

1. Department of Physics and Collaborative Innovation Center for; Optoelectronic Semiconductors and Efficient Devices; Fujian Provincial Key Laboratory of Theoretical; and Computational Chemistry; Xiamen University; Xiamen Fujian 361005 P.R. China

2. School of Optoelectronic Information; University of Electronic Science and Technology of China; Chengdu Sichuan 610054 P.R. China

Publisher

Wiley

Subject

General Chemistry,Biochemistry,Organic Chemistry

Reference45 articles.

1. Comparison of Wide Band Gap Semiconductors for Power Electronics Applications 2003

2. Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

3. Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment

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