High‐Performance Flexible Bottom‐Gate Organic Field‐Effect Transistors with Gravure Printed Thin Organic Dielectric-Reference-Cited by-同舟云学术

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High‐Performance Flexible Bottom‐Gate Organic Field‐Effect Transistors with Gravure Printed Thin Organic Dielectric

Published:2014-02-28 Issue:3 Volume:1 Page:1300123
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Vaklev Nikolay L.¹,Müller Robert²,Muir Beinn V. O.¹³,James David T.¹,Pretot Roger⁴,van der Schaaf Paul⁴,Genoe Jan²,Kim Ji‐Seon¹,Steinke Joachim H. G.³,Campbell Alasdair J.¹

Affiliation:

1. Experimental Solid State Group and the Centre for Plastic Electronics, Department of Physics Blackett Laboratory, South Kensington Campus, Imperial College London London SW7 2AZ UK

2. imec, PMELAE Kapeldreef 75 Leuven 3001 Belgium

3. Department of Chemistry, RCS1, South Kensington Campus Imperial College London London SW7 2AZ UK

4. BASF Schweiz AG Klybeckstrasse 141 Basel 4057 Switzerland

Funder

European Community's Seventh Framework Programme

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201300123

Reference26 articles.

1. Optimized circuit design for flexible 8-bit RFID transponders with active layer of ink-jet printed small molecule semiconductors

2. An 8-Bit, 40-Instructions-Per-Second Organic Microprocessor on Plastic Foil

3. Flexible active-matrix displays and shift registers based on solution-processed organic transistors

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