Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS2Nanosheets-Reference-Cited by-同舟云学术

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Defect-Modulated Transistors and Gas-Enhanced Photodetectors on ReS2Nanosheets

Published:2016-01-18 Issue:6 Volume:3 Page:1500707
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Yang Shengxue¹,Kang Jun²,Yue Qu³,Coey J. M. D.¹⁴,Jiang Chengbao¹

Affiliation:

1. School of Materials Science and Engineering; Beihang University; Beijing 100191 P. R. China

2. Department of Physics; University of Antwerp; Groenenborgerlaan 171 B-2020 Antwerp Belgium

3. College of Science; National University of Defense Technology; Changsha 410073 P. R. China

4. School of Physics and AMBER; Trinity College; Dublin 2 Ireland

Funder

National Natural Science Foundations of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201500707/fullpdf

Reference37 articles.

1. Optical property of the near band-edge transitions in rhenium disulfide and diselenide

2. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

3. In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals

4. Semiconductor Electrodes: LX . Photoelectrochemistry of and in Aqueous Solutions

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