N2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir-Blodgett Technique-Reference-Cited by-同舟云学术

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N2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir-Blodgett Technique

Published:2015-02-18 Issue:5 Volume:2 Page:1400515
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Chauhan Neha¹,Palaninathan Vivekanandan¹,Raveendran Sreejith¹,Poulose Aby Cheruvathoor¹,Nakajima Yoshikata¹,Hasumura Takashi¹,Uchida Takashi¹,Hanajiri Tatsuro¹,Maekawa Toru¹,Kumar D. Sakthi¹

Affiliation:

1. Bio-Nano Electronics Research Centre; Graduate School of Interdisciplinary New Science; Toyo University; 2100, Kujirai Kawagoe Saitama 350-8585 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

strategic research foundation at private universities

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201400515/fullpdf

Reference77 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene for future electronics

3. Biomedical Applications of Graphene

4. Graphene synthesis: relationship to applications

5. Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

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