Exchange Bias Effect in Epitaxial LaMnO 3+δ Film Induced by Electron Beam Irradiation-Reference-Cited by-同舟云学术

Exchange Bias Effect in Epitaxial LaMnO 3+δ Film Induced by Electron Beam Irradiation

Published:2019-12-10 Issue:2 Volume:7 Page:1901296
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Xue Mingzhu¹^ORCID,Ding Shilei¹,Lai Youfang¹,Li Xin¹,Zha Liang¹,Peng Yuxuan¹,Liang Zhongyu¹,Yang Wenyun¹,Men Yong²,Kong Xiangdong²,Han Li²,Chen Xuegang³,Yang Jinbo¹⁴⁵

Affiliation:

1. State Key Laboratory for Mesoscopic Physics School of Physics Peking University Beijing 100871 P. R. China

2. Department of Micro‐nano Fabrication Technology Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 P. R. China

3. School of Materials Engineering Purdue University West Lafayette IN 47906 USA

4. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

5. Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201901296

Reference42 articles.

1. Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

2. Unexpected exchange bias behaviour in CoFeB ultrathin films for MTJ sensors investigated by Lorentz microscopy

3. Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

4. New Magnetic Anisotropy

5. Exchange bias

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