Atomic Layer Deposition of Al 2 O 3 Directly on 2D Materials for High‐Performance Electronics-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Al 2 O 3 Directly on 2D Materials for High‐Performance Electronics

Published:2019-03-18 Issue:10 Volume:6 Page:1802055
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Li Na¹²,Wei Zheng¹²,Zhao Jing³,Wang Qinqin¹²,Shen Cheng¹²,Wang Shuopei¹²,Tang Jian¹²,Yang Rong¹²⁴,Shi Dongxia¹²⁴,Zhang Guangyu¹²⁴⁵⁶^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of Science Beijing 100190 China

2. School of Physical SciencesUniversity of Chinese Academy of Sciences Beijing 100190 China

3. Beijing Institute of Nanoenrgy and NanosystemsChinese Academy of SciencesNational Center for Nanoscience and Technology (NCNST) Beijing 100190 China

4. Beijing Key Laboratory for Nanomaterials and Nanodevices Beijing 100190 China

5. Collaborative Innovation Center of Quantum Matter Beijing 100190 China

6. Songshan‐Lake Materials Laboratory Dongguan ,523808 Guangdong Province China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201802055

Reference33 articles.

1. Super-Elastic Graphene Ripples for Flexible Strain Sensors

2. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics

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4. A microprocessor based on a two-dimensional semiconductor

5. Single-layer MoS2 transistors

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