Field-Dependent Electrical and Thermal Transport in Polycrystalline WSe2-Reference-Cited by-同舟云学术

Field-Dependent Electrical and Thermal Transport in Polycrystalline WSe2

Published:2018-03-15 Issue:11 Volume:5 Page:1701161
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Kim WungYeon¹²,Kim HyunJeong¹²,Hallam Toby²³,McEvoy Niall²,Gatensby Riley²,Nerl Hannah C.²,O'Neill Katie²,Siris Rita⁴,Kim Gyu-Tae¹,Duesberg Georg S.²⁴

Affiliation:

1. School of Electrical Engineering; Korea University; Seoul 136-701 South Korea

2. CRANN; AMBER and School of Chemistry; Trinity College Dublin; Dublin 2 Ireland

3. School of Physics; Newcastle University; Newcastle-upon-Tyne NE1 7RU UK

4. Faculty of Electrical Engineering and Information Technology, EIT2; Universität der Bundeswehr; München 85577 Neubiberg Germany

Funder

Science Foundation Ireland

Seventh Framework Programme

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference52 articles.

1. Single-layer MoS2 transistors

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

4. WSe2 field effect transistors with enhanced ambipolar characteristics

5. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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