Surface Modification of V-VI Semiconductors Using Exchange Reactions within ALD Half-Cycles-Reference-Cited by-同舟云学术

Surface Modification of V-VI Semiconductors Using Exchange Reactions within ALD Half-Cycles

Published:2018-01-15 Issue:5 Volume:5 Page:1701155
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Wiegand Christoph W.¹²^ORCID,Zierold Robert¹,Faust René¹,Pohl Darius²,Thomas Andy²,Rellinghaus Bernd²,Nielsch Kornelius¹³

Affiliation:

1. Institute of Nanostructure- and Solid State Physics and Center for Hybrid Nanostructures; Universität Hamburg; Luruper Chaussee 149 22607 Hamburg Germany

2. Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden); Institute for Metallic Materials; Helmholtzstrasse 20 01069 Dresden Germany

3. Institute of Materials Science; Technical University Dreden; Helmholtzstrasse 10 01062 Dresden Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference59 articles.

1. The birth of topological insulators

2. Colloquium: Topological insulators

3. Resolving the Dirac cone on the surface of Bi2Te3 topological insulator nanowires by field-effect measurements

4. Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb2Te3 nanowires

5. Surface state dominated transport in topological insulator Bi2Te3 nanowires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties;ACS Nano;2024-06-26

2. Enhanced optical absorption and pollutant adsorption for photocatalytic performance of three-dimensional porous cellulose aerogel with BiVO4 and PANI;Journal of Materials Research;2020-03-02