Improved Quality Absorber Layer of I–III–VI 2 Compound Semiconductors: Purification Process Revisited-Reference-Cited by-同舟云学术

Improved Quality Absorber Layer of I–III–VI 2 Compound Semiconductors: Purification Process Revisited

Published:2019-08-14 Issue:10 Volume:7 Page:1900615
ISSN:2194-4288
Container-title:Energy Technology
language:en
Short-container-title:Energy Technol.

Author:

Sharma Shailesh Narain¹²,Chawla Parul¹²,Nutan Gautam V.³,Vijayan Narayanasamy¹²,Singh Vidyanand¹²,Srivastava Avinash Kumar⁴,Vashishtha Parth³^ORCID

Affiliation:

1. CSIR - Human Resource Development Centre(CSIR-HRDC) CampusAcSIR - Academy of Scientific & Innovative Research Postal Staff College Area, Sector 19, Kamla Nehru Nagar Ghaziabad Uttar Pradesh 201002 India

2. CSIR-National Physical Laboratory Dr. K.S. Krishnan Road New Delhi 110012 India

3. School of Materials Science and EngineeringNanyang Technological University (NTU) 50 Nanyang Avenue Singapore 639798 Republic of Singapore

4. CSIR-Advanced Materials and Processes Research Institute Bhopal 462026 India

Funder

Nanyang Technological University

Ministry of New and Renewable Energy India

Publisher

Wiley

Subject

General Energy

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ente.201900615

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4. Preparation and characteristics of CuGaSe2/CdS solar cells

5. Technological status of Cu(In,Ga)(Se,S)2-based photovoltaics

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