In-plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell-Reference-Cited by-同舟云学术

In-plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell

Published:2014-02-11 Issue:5 Volume:23 Page:546-558
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Tomić Stanko¹,Sogabe Tomah²,Okada Yoshitaka²

Affiliation:

1. Joule Physics Laboratory, School of Computing, Science and Engineering; University of Salford; Manchester M5 4WT UK

2. Research Centre for Advanced Science and Technology; The University of Tokyo; 4-6-1 Komaba, Meguro-ku Tokyo 153-8904 Japan

Funder

New Energy and Industrial Technology Development Organisation

Science Technology Facility Council

The Royal Society, London

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference43 articles.

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2. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Physical Review Letters,1997

3. On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells;Tomić;Applied Physics Letters,2011

4. Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays;Tomić;Physical Review B,2010

5. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell;Martí;Physical Review Letters,2006

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