9‐2: Compact Model for Thin‐Film Transistors with Capacitance Frequency Dispersion

Abstract

In thin‐film transistors (TFTs), issues such as interface states may lead to unstable device performance and complex physical phenomena, such as frequency dispersion effects. This paper establishes a three‐terminal TFT compact model capable of replicating capacitance dispersion phenomena and directly applying to SPICE circuit simulations. The model decomposes the transistor's capacitance frequency response into the superposition of responses from different electronic states. The different electronic states are emulated by parallel branches, each composed of voltage‐dependent capacitance and resistance connected in series. The Powell algorithm is employed to achieve automatic parameter optimization. The model is generic for TFTs and successfully replicates capacitance dispersion phenomena in carbon nanotube (CNT) and indium‐gallium‐zinc‐oxide (IGZO) thin‐film transistors. This work provides insights to the circuit behavior of display driver circuits at high frequencies and improving circuit reliability.