Transformation of hexagonal boron nitride nanocomposite underfill in microelectronics packaging

Author:

Razgaleh S. A.123,Aravamudhan Shyam1

Affiliation:

1. Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering (JSNN) North Carolina Agricultural and Technical State University Greensboro North Carolina USA

2. Civil and Environmental Engineering Department, Pratt School of Engineering Duke University Durham North Carolina USA

3. Paul Merage School of Business and Management University of California (Irvine) Irvine California USA

Abstract

AbstractIn recent years, hexagonal boron nitride (h‐BN) has gained attention for its potential applications in thermal management and high‐temperature uses. To evaluate the environmental impact of employing h‐BN nanocomposites in microelectronics packaging for thermal management, a comprehensive assessment was conducted. This assessment is particularly significant due to the nature of nanoparticles and the importance of mitigating potential environmental toxicity. Electronic waste incineration, compared to e‐waste recycling, carries a higher environmental burden. Building on previous research, this project explores the feasibility of h‐BN nanocomposites in microelectronic packaging for thermal management. The study focuses on the physiochemical transformations of h‐BN nanocomposite underfills during incineration, considering the influence of particle size and concentration on these transformations. Various analytical techniques, including SEM, XRD, FTIR spectroscopy, and TEM, were employed to identify and characterize the particles throughout their life cycle. By delving into physiochemical transformations and investigating the effects of particle size and concentration, this research enhances our understanding of h‐BN nanocomposites, aiding informed decision‐making for environmentally sustainable use in microelectronics packaging.Highlights h‐BN nanoparticles remained inert throughout their life cycle. Underfill characterization showed minimal physiochemical changes in h‐BN. h‐BN is a promising thermal transfer candidate in microelectronics.

Funder

Semiconductor Research Corporation

Publisher

Wiley

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