Proposal and experimental study of a high-precision polycrystalline-silicon film resistor with a quasi-double-layer structure

Author:

Shimamoto Hiromi,Ohnishi Kazuhiro,Shiba Takeo,Hashimoto Takashi,Kikuchi Toshiyuki,Tamaki Yooichi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference20 articles.

1. A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

2. Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax. IEDM Tech Dig, p 332-335, 2001.

3. 5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT. BCTM Proc, p 26-29, 2001.

4. Prospects for 200 GHz on silicon with SiGe heterojunction bipolar transistors. BCTM Proc, p 19-25, 2001.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering;Materials Science in Semiconductor Processing;2007-08

2. Rich spike-synchronization phenomena of pulse-coupled bifurcating neurons;2005 IEEE International Symposium on Circuits and Systems

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