An ORP-EIS approach to study the gas incorporation into aluminum etch films-Reference-Cited by-同舟云学术

An ORP-EIS approach to study the gas incorporation into aluminum etch films

Published:2016-03-07 Issue:8 Volume:48 Page:699-705
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Tzedaki M.¹,Verguts S.¹,Van Ingelgem Y.¹,Hammons J. A.²,De Graeve I.¹,Terryn H.¹

Affiliation:

1. Department of Materials and Chemistry, Research Group of Electrochemical and Surface Engineering; Vrije Universiteit Brussel; Pleinlaan 2 1050 Brussel Belgium

2. X-ray Science Division; Argonne National Laboratory; 9700 S. Cass, Argonne 60439 Illinois USA

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. Reproducible sharp‐pointed tip preparation for field ion microscopy by controlled ac polishing

2. Tip sharpening by normal and reverse electrochemical etching

3. AC-anodising of aluminium: Contribution to electrical and efficiency study

4. A method to detect retained gas during AC electrograining using in-situ small angle X-ray scattering

5. In situ study of gas transport through Al(OH)3 gels during AC processing

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