P‐210: Photolithography Patterning of Organic Light‐Emitting Diodes Using Solvent Resistant Electron Transport Materials

Abstract

In this paper, we develop a novel approach to achieve ultra‐high resolution in organic light‐emitting diodes (OLEDs) through a photolithography patterning process. It is important to apply a solvent resistant electron transport layer (ETL) in the photolithography pattering of OLED because of solution coating process of photoresist on the ETL. Therefore, a solvent resistant ETL named 2,7‐bis(4,6‐diphenyl‐1,3,5‐triazin‐2‐yl)‐9,9 ′ ‐spirobi[fluorene] (SBF‐Trz) was developed and employed as the ETL of OLEDs. The SBF‐Trz demonstrated excellent solvent resistance during photolithography process and enabled device performances comparable to those of the conventional OLED without any photolithography process. It was found that the SBF‐Trz ETL is appropriate as the ETL of the OLED patterned by photolithography due to good electron transport property, good stability, and good solvent resistance.