An empiricalI-Vmodel of tunneling real-space transfer transistors for monostable-bistable transition logic element application-Reference-Cited by-同舟云学术

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An empiricalI-Vmodel of tunneling real-space transfer transistors for monostable-bistable transition logic element application

Published:2015-01-23 Issue:1 Volume:29 Page:77-82
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Bai Fan¹²,Li Liping¹

Affiliation:

1. Department of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu China 611731

2. Department of Electrical and Computer Engineering; University of Illinois at Urbana-Champaign; Urbana USA 61801

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2047/fullpdf

Reference12 articles.

1. Monostable-bistable transition logic element formed by tunneling real-space transfer transistor with negative differential resistance;Yu;IEEE Electron Device Lett,2010

2. Negative differential resistance through real-space electron transfer;Hess;Appl Phys Lett,1979

3. Novel real-space hot-electron transfer devices;Kastalsky;Electron Device Lett, IEEE,1983

4. Physics of real-space transfer transistors;Kizilyalli;J Appl Phys,1989

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