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A 60 GHz transformer-coupled neutralized low power CMOS power amplifier

  • Published:2015-08-28 Issue:11 Volume:57 Page:2487-2491
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Chen Bo1,Shen Li1,Gao Jianjun1

Affiliation:

1. School of Information and Science Technology, East China Normal University; Shanghai 200241 People's Republic of China

Funder

National Natural Science Foundation of China

Shanghai Minhang Excellent Talents

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. T. Wang T. Mitomo N. Ono O. Watanabe 2011 1 4

2. Efficient inductance calculation for planar spiral inductors and transformers based on analytical, concentric half-turn formulas;Gao;Int J Radio Freq Microwave Comput Aided Eng,2006

3. Design considerations for 60 GHz transformer-coupled CMOS power amplifiers;Chowdhury;IEEE J Solid-State Circuits,2009

4. A 58-65 GHz neutralized CMOS power amplifier with PAE Above 10% at 1-V Supply;Chan;IEEE J Solid-State Circuits,2010

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Investigation of Different Topologies of 1-100 GHz on-chip Transformers using 130 nm SiGe BiCMOS;Engineering, Technology & Applied Science Research;2019-12-01

2. A 45- to 57-GHz low-power amplifier in 90 nm bulk CMOS;Microwave and Optical Technology Letters;2017-08-23
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