P‐7.19: Investigation on the stress of color filter and subsequent failure behavior of COA structure

Abstract

Color filter (CF) is a critical component in thin‐film transistor liquid crystal display (TFT‐LCD) products, which directly determines the optical performance of LCDs. CF was manufactured through the photolithography process. The physical and chemical properties of CF materials not only influence the image quality of displays, but also directly determine the manufactures and yields in the CF production process. Current research on CF focuses on their optical and manufacturing properties, which basically does not pay much attention to their mechanical properties. Especially in products with CF on array (COA) structure, the CF layer is above the array pattern. During the production process of photoresists, the stress of CF materials may cause a failing array circuit. In the process of developing a red photoresist, we observed dark‐dotted anomalies caused by the break of the gate insulator (GI) due to photoresist stress. Through stress analysis of different formulations, it was discovered that utilizing multifunctional reactive monomers could significantly increase material stress, resulting in an increased incidence of pixel dark spots. Combined with GI failure, the mechanism of dark spots was demonstrated. The analysis provided theoretical support and guidance for improving the production yields of COA‐structured TFT‐LCDs.