P‐6.3: A novel mode of device failure due to the photosensitive properties of silicon oxide defects

Abstract

In order to improve the optical effect of LCD display device, the full‐silicon‐oxide structure of Buffer film is introduced into the actual product. However, the lack of silicon oxide film structure will lead to increased risk of product reliability. Different from the diffusion effect of alkaline cations from glass substrates in previous literature, this paper mainly analyzes the novel failure effect of thin film transistors (TFT) caused by the defects of silicon oxide film. The main reason for the device failure under the bias condition is that the photosensitive characteristics of the silicon oxide defect cause the TFT device threshold voltage shift and failure. The dynamic process of the defect, transport and actual action on the TFT device is further explained. Finally, the reliability of the device is improved by optimizing the parameters. This will provide a new reference for the actual failure analysis of display devices.