P‐5.24: Improvement of a‐Si TFT Performance on Adjustable Frequency G‐sync Function Monitor Display

Author:

Yao Zhi-xiao1,Zheng Xiao-yi1,Cui Xiao-peng1,Yan Jing-long1,Chen Wei-tao1,Diao Kai1,Liao Yan-ping1,Wang Zhang-tao1

Affiliation:

1. Beijing BOE Display Technology Co., Ltd Beijing China

Abstract

In this paper, the electrical performance of a‐Si TFT product on adjustable frequency display is studied. It is found that panel flicker behavior is related to a‐Si channel characteristics, which is related to the TFT Cgs capacitance increase at low display frequency. And it is also found that the relationship between brightness fluctuations and TFT leakage current affected by Poole‐Frenkel effect. By optimizing TFT process parameter to reduce the change of Cgs capacitance and reduce TFT leakage current in Poole‐Frenkel region, panel flicker performance is obviously improved. As a result, gaming display product can meet the G‐sync optical standard requirement.

Publisher

Wiley

Reference3 articles.

1. Low photo-leakage current amorphous silicon thin film transistor with a thin active layer;Choi Young Jin;Journal of Non-Crystalline Solids,2000

2. An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors;Chen Guan-Fu;IEEE TRANSACTIONS ON ELECTRON DEVICES,2019

3. Modeling of the Reverse Characteristics of a-Si: H TFTs;Servati Peyman;IEEE TRANSACTIONS ON ELECTRON DEVICES,2002

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