Layered Compounds in the In2O3-Ga2O3-ZnO System and Related Compounds in the Ternary System-Reference-Cited by-同舟云学术

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Layered Compounds in the In2O3-Ga2O3-ZnO System and Related Compounds in the Ternary System

Published:2016-10-07 Issue: Volume: Page:1-49
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Container-title:Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO
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John Wiley & Sons, Ltd

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http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119247289.ch1/fullpdf

Reference72 articles.

1. Optical properties of indium oxide;Weiher;J. Appl. Phys.,1966

2. Nature of the band gap of In2O3 revealed by first-principles calculations and X-ray spectroscopy;Walsh;Phys. Rev. Lett.,2008

3. Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressure;Mang;Solid State Commun.,1995

4. Optical absorption and photoconductivity in the band edge of β-Ga2O3;Tippins;Phys. Rev.,1965

5. Classification of perovskite and other ABO3-type compounds;Roth;J. Res. Natl. Bur. Stand.,1957

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