Thin Film Polymer and Flexible Memories

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John Wiley & Sons, Ltd

Reference82 articles.

1. Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films (East China University of S&T);Hou;Applied Physics Letters,2013

2. P(VDF-TrFE-CFE) terpolymer thin-film for high performance non-volatile memory (Nanjing University);Chen;Applied Physics Letters,2013

3. von Nordheim , D. et al. 2013 Retention of thin ferroelectric VDF-TrFE copolymer films evaluated from dielectric non-linearities (University of Applied Science, Jena) ISAF PFM 208

4. Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator (Kyung Hee University);Bak;Journal of Vacuum S&T,2013

5. Graphene-ferroelectric hybrid devices for multi-valued memory system (University of Texas Dallas);Jandhyala;Applied Physics Letters,2013

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