Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+)-Reference-Cited by-同舟云学术

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Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+)

Published:2012-02-15 Issue:8 Volume:44 Page:934-937
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

He A.¹,Xu S.¹,Foroughi-Abari A.²,Karpuzov D.¹

Affiliation:

1. Alberta Centre for Surface Engineering and Science; University of Alberta; Edmonton; T6G 2 V4; Canada

2. Department of Chemical and Materials Engineering; University of Alberta; Edmonton; T6G 2 V4; Canada

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. The primary ion energy dependence of the analyzing depth in SIMS measurements

2. Ultralow-energy SIMS for shallow semiconductor depth profiling

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques;Thin Solid Films;2013-07

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