Fast short‐circuit protection under current imbalance condition for multi‐paralleled SiC‐MOSFETs
Author:
Affiliation:
1. Research and Development Group, Hitachi, Ltd. Hitachi Ibaraki Japan
2. Electronic and Infocommunications Engineering, Graduate School of Engineering Osaka University Suita Osaka Japan
Abstract
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/eej.23429
Reference22 articles.
1. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules
2. Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence
3. UngerC PfostM.Energy capability of SiC MOSFETs.Procceedings of IEEE 28th Int. Symp. Power Semicond. Devices IC's (ISPSD) Prague Czech;2016:275‐278.
4. VelanderE KruseL MeierS et al.Analysis of short circuit type II and III of high voltage SiC MOS‐FETs with fast current source gate drive principle.Procceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC‐ECCE Asia) Hefei China;2016:3392‐3397.
5. Fault protection for a SiC MOSFET based on gate voltage subjected to short circuit type II
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