Carrier trapping and recombination in TlGaSe2 layered crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201248363/fullpdf
Reference34 articles.
1. Negative thermal expansion due to negative area compressibility in TlGaSe2 semiconductor with layered crystalline structure
2. Mechanisms of current flow in p-TlGaSe2single crystals
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1. Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects;Journal of Applied Physics;2024-05-22
2. The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects;Semiconductor Science and Technology;2024-02-15
3. Photogalvanic Currents and Electrical Inhomogeneity of a 2D Structured Single Crystal of Ferroelectric–Semiconductor;Physics of the Solid State;2021-12-20
4. A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering;physica status solidi (b);2021-11-09
5. Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe2 Single Crystal;Physics of the Solid State;2020-04
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