Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers
Author:
Affiliation:
1. University Grenoble-Alpes; 38000 Grenoble France
2. CEA; INAC-PHELIQS; 17 av. des Martyrs 38000 Grenoble France
3. CNRS; Institut Néel; 25 av. des Martyrs 38000 Grenoble France
Funder
EU ERC-StG “TeraGaN”
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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