Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)-Reference-Cited by-同舟云学术

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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)

Published:2018-01 Issue:1 Volume:255 Page:1870101
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Tarasenko S. A.¹,Poshakinskiy A. V.¹,Simin D.²,Soltamov V. A.¹,Mokhov E. N.¹³,Baranov P. G.¹,Dyakonov V.²⁴^ORCID,Astakhov G. V.¹²^ORCID

Affiliation:

1. Ioffe Institute; 194021 St. Petersburg Russia

2. Julius-Maximilian University of Würzburg, Experimental Physics VI; 97074 Würzburg Germany

3. ITMO University; 197101 St. Petersburg Russia

4. Bavarian Center for Applied Energy Research (ZAE Bayern); 97074 Würzburg Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operation Modes of an Optically Pumped 6H SiC Quantum/Solid-State Magnetometer;IEEE Sensors Journal;2024-06-01

2. Intrinsic defects in non-irradiated silicon carbide crystals;Open Journal of Chemistry;2024-03-12

3. Optical spin initialization of spin- 32 silicon vacancy centers in 6H−SiC at room temperature;Physical Review B;2021-03-11

4. Level-crossing induced spin phenomena in SiC: A theoretical study;Physical Review B;2021-01-05

5. Experimental characterization of spin- 32 silicon vacancy centers in 6H -SiC;Physical Review B;2020-04-27

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