Photoluminescence evaluation of the quality of Cd0.9 Zn0.1 Te detectors doped with different indium concentrations
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201147360/fullpdf
Reference12 articles.
1. Cadmium zinc telluride high-resolution detector technology
2. Cadmium zinc telluride and its use as a nuclear radiation detector material
3. Gamma-radiation effect on donor and acceptor states in CdTe and CdTe:Cl
4. Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties
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1. Increased radiation hardness of detector-grade Cd0.96Zn0.04Te crystals by doping with In and Ge;Radiation Physics and Chemistry;2019-12
2. Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation;Journal of Materials Science: Materials in Electronics;2018-05-04
3. Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors;Sensors and Actuators A: Physical;2013-12
4. Low-temperature photoluminescence analysis of the γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals;Journal of Luminescence;2013-12
5. Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth;Journal of Electronic Materials;2013-08-14
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