Modifying the Electronic Properties of Se/n‐Si Heterostructure Using Electrolysis-Reference-Cited by-同舟云学术

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Modifying the Electronic Properties of Se/n‐Si Heterostructure Using Electrolysis

Published:2018-12-11 Issue:2 Volume:256 Page:1800445
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

John Joshua D.¹,Enomoto Kunitaka¹,Miyachi Noritoshi¹,Saito Ichitaro¹,Masuzawa Tomoaki²,Chua Daniel H. C.³,Yamada Takatoshi⁴,Okano Ken¹

Affiliation:

1. Department of PhysicsInternational Christian University3‐10‐2 OsawaMitakaTokyo181‐8585Japan

2. Research Institute of ElectronicsShizuoka University3‐5‐1 JohukuNaka‐kuHamamatsu432‐8011Japan

3. Department of Material Science and EngineeringNational University of Singapore9 Engineering Drive 1Singapore117 576Singapore

4. Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and Technology1‐1‐1 HigashiTsukuba305‐8565Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800445

Reference26 articles.

1. Heterostructure devices: A device physicist looks at interfaces

2. X-ray imaging using avalanche multiplication in amorphous selenium: Investigation of depth dependent avalanche noise

3. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

4. Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

5. K.Tanioka Ultra‐high‐sensitivity New Super‐HARP Pickup Tube in:Proc. 2001 IEEE Workshop CCD and Advanced Image Sensors IEEE 2001 pp.216–219.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of x-ray irradiation on charge transport and charge collection efficiency in stabilized a-Se photoconductors;Journal of Applied Physics;2020-02-24

2. Recent Developments of Amorphous Selenium-Based X-Ray Detectors: A Review;IEEE Sensors Journal;2020-02-15

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