Characterization of AlGaInN layers using X-ray diffraction and fluorescence
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201046418/fullpdf
Reference12 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. MOVPE growth of GaN on Si(111) substrates
3. A new spectrometer for total reflection X-ray fluorescence analysis of light elements
4. Total reflection X-ray fluorescence analysis with monoenergetic excitation and full spectrum excitation using rotating anode X-ray tubes
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2. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N;Journal of Applied Physics;2016-07-07
3. Polarization engineering of c -plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers;physica status solidi (b);2015-11-30
4. Trends and Future Prospects;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19
5. Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys;Journal of Physics D: Applied Physics;2013-05-31
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