Optical Absorption of Excitons in Strained Quasi 2D GaN Quantum Dot-Reference-Cited by-同舟云学术

Optical Absorption of Excitons in Strained Quasi 2D GaN Quantum Dot

Published:2019-03-18 Issue:5 Volume:256 Page:1800361
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Aghoutane Noreddine¹^ORCID,El‐Yadri Mohamed¹,El Aouami Asmae¹,Feddi El Mustapha¹,Dujardin Francis²,El Haouari Mohamed³

Affiliation:

1. Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI)Group of Optoelectronic of Semiconductors and NanomaterialsENSET, Mohammed V University in RabatRabatMorocco

2. LCP‐A2MCUniversité de Lorraine57000 MetzFrance

3. Centre Régional des Métiers de l'Education et de Formation (CRMEF) TangerTangerMorocco

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800361

Reference33 articles.

1. Topological phases in two-dimensional materials: a review

2. Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3

3. Strain-induced topological phase transition in phosphorene and in phosphorene nanoribbons

4. Interface-Induced Topological Insulator Transition inGaAs/Ge/GaAsQuantum Wells

5. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

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