Resonant tunneling-based optoelectronic effect in p -i -n nanocrystalline silicon solar cell-Reference-Cited by-同舟云学术

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Resonant tunneling-based optoelectronic effect in p -i -n nanocrystalline silicon solar cell

Published:2013-06-14 Issue:9 Volume:250 Page:1832-1836
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Chen Jing¹,Liu YongSheng¹,Zhang YuFeng¹,Cao HaiJing¹

Affiliation:

1. Department of Physics and Mathematics; Shanghai University of Electric Power; PingLiang Road 2109 201300 Shanghai, P. R. China

Funder

Innovation Program of Shanghai Municipal Education Commission

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201248459/fullpdf

Reference26 articles.

1. Solar conversion efficiency of photovoltaic and photoelectrolysis cells with carrier multiplication absorbers

2. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

3. Non-Poissonian Exciton Populations in Semiconductor Nanocrystals via Carrier Multiplication

4. High quantum efficiency two color type-II InAs∕GaSb n-i-p-p-i-n photodiodes

5. A hot-carrier solar cell with optical energy selective contacts

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