Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Published:2016-03-16 Issue:8 Volume:253 Page:1523-1528
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Adolph David¹,Ive Tommy¹

Affiliation:

1. Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology; 41296 Göteborg Sweden

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy

2. Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios

3. Morphology evolution of ZnO(000 1̄) surface during plasma-assisted molecular-beam epitaxy

4. Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire

5. Effect of O/Zn Flux Ratio on Crystalline Quality of ZnO Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy;APL Materials;2016-08

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