Properties of GaN nanowires with Sc x Ga1−x N insertion-Reference-Cited by-同舟云学术

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Properties of GaN nanowires with Sc x Ga1−x N insertion

Published:2017-07-25 Issue:8 Volume:254 Page:1600740
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bao A.¹,Goff L. E.²,Zhu T.¹,Sahonta S.-L.¹,Ritchie D. A.²,Joyce H. J.³,Moram M. A.⁴,Oliver R. A.¹

Affiliation:

1. Department of Materials Science and Metallurgy; University of Cambridge; Cambridge UK

2. Cavendish Laboratory; Department of Physics; University of Cambridge; Cambridge UK

3. Department of Engineering; University of Cambridge; Cambridge UK

4. Department of Materials; Imperial College London; London UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. ScGaN and ScAlN: Emerging nitride materials;Moram;J. Mater. Chem. A,2014

2. Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides;Zhang;J. Appl. Phys,2013

3. Origin of the anomalous piezoelectric response in wurtzite ScxAl1-xN alloys;Tasnádi;Phys. Rev. Lett,2010

4. Direct comparison of catalyst-free and catalyst-induced GaN nanowires;Chèze;Nano Res,2010

5. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111);Debnath;Appl. Phys. Lett,2007

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