Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy-Reference-Cited by-同舟云学术

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Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy

Published:2017-11-30 Issue:5 Volume:255 Page:1700427
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Minj Albert¹^ORCID,Ammar Hichem Ben¹,Cros Ana²,Garro Nuria²,Gamarra Piero³,Delage Sylvain L.³,Ruterana Pierre¹

Affiliation:

1. CIMAP, UMR 6252, ENSICAEN; 6 Bd Maréchal Juin 14050 Caen Cedex 4 France

2. Institute of Materials Science (ICMUV), Universidad de Valencia; P.O. Box 22085 E-46071 Valencia Spain

3. III-V Lab, 1 Avenue Augustin Fresnel, Campus Polytechnique; 91767 Palaiseau France

Funder

European Union

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201700427/fullpdf

Reference41 articles.

1. Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

2. On the origin of a-type threading dislocations in GaN layers

3. On the origin of threading dislocations in GaN films

4. Solid phase immiscibility in GaInN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage;Applied Surface Science;2020-06

2. Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy;Materials Science in Semiconductor Processing;2019-03

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