Control of Crystal Structure of Ga2 O3 on Sapphire Substrate by Introduction of α-(Al x Ga1−x )2 O3 Buffer Layer
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University; Kyoto 615-8510 Japan
2. Photonics and Electronics Science and Engineering Center, Kyoto University; Kyoto 615-8520 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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