Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction-Reference-Cited by-同舟云学术

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Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction

Published:2019-05-20 Issue:10 Volume:256 Page:1900126
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Juarez‐Perez Emilio J.¹²³,Qi Yabing¹

Affiliation:

1. Energy Materials and Surfaces Science Unit (EMSSU)Okinawa Institute of Science and Technology Graduate University1919‐1 Tancha, Onna‐son, KunigamiOkinawa 904‐495Japan

2. ARAID, Government of Aragon50018 ZaragozaSpain

3. Institute of Nanoscience of Aragon (INA)University of Zaragoza50018 ZaragozaSpain

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900126

Reference40 articles.

1. Understanding the Implication of Carrier Diffusion Length in Photovoltaic Cells

2. Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure

3. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

4. Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short Photoluminescence Lifetimes Linked to Crystallite Dimensions, Connectivity, and Perovskite Crystal Phases;The Journal of Physical Chemistry C;2022-02-15

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