Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene-Reference-Cited by-同舟云学术

Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene

Published:2015-07-15 Issue:11 Volume:252 Page:2375-2379
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bayle Maxime¹,Reckinger Nicolas²,Huntzinger Jean-Roch¹,Felten Alexandre²,Bakaraki Ahmad¹,Landois Périne¹,Colomer Jean-François²,Henrard Luc²,Zahab Ahmed-Azmi¹,Sauvajol Jean-Louis¹,Paillet Matthieu¹

Affiliation:

1. Laboratoire Charles Coulomb; CNRS-University of Montpellier; Place E. Bataillon 34095 Montpellier France

2. Department of Physics and Research Group on Carbon Nanostructures (CARBONNAGe); University of Namur; 61 rue de Bruxelles 5000 Namur Belgium

Funder

French ANR

GDRI GNT 3217 “Graphene and Nanotubes: Science and Applications.”

European Union Seventh Framework Programme

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552204/fullpdf

Reference26 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Raman Spectrum of Graphene and Graphene Layers

3. Imaging Stacking Order in Few-Layer Graphene

4. Twinning and Twisting of Tri- and Bilayer Graphene

5. Direct Imaging of Rotational Stacking Faults in Few Layer Graphene

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