Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation-Reference-Cited by-同舟云学术

Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation

Author:

Zatsepin D. A.¹²³,Zatsepin A. F.²,Boukhvalov D. W.⁴⁵,Kurmaev E. Z.¹²,Gavrilov N. V.⁶,Skorikov N. A.¹,von Czarnowski A.⁷,Fitting H.-J.⁷

Affiliation:

1. M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian; Academy of Sciences; 620990 Yekaterinburg Russia

2. Institute of Physics and Technology; Ural Federal University; Mira Street 19 620002 Yekaterinburg Russia

3. Institute of Physics; Polish Academy of Sciences; 02-668 Warszawa Poland

4. Department of Chemistry; Hanyang University; 17 Haengdang-dong Seongdong-gu 133-791 Seoul Korea

5. Department of Theoretical Physics and Applied Mathematics; Ural Federal University; Mira Street 19 620002 Yekaterinburg Russia

6. Institute of Electrophysics; Russian Academy of Sciences; Ural Branch 62990 Yekaterinburg Russia

7. Institute of Physics; University of Rostock; 18051 Rostock Germany

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference19 articles.

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